Sidoretz R. Influence of the base region and contacts structure on the characteristics of the injection diodes

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U003033

Thesis Registration Form

0404U003033.pdf

Applicant for

Sidoretz Rostislav Grigorievich

Specialization

05.12.20 - Оптоелектронні системи

Date of defense

29-06-2004

Specialized Academic Board

Д 41.816.01

O.S. Popov Odessa National Academy of Telecommunications

Essay

To urgent questions of advancing of the characteristics of the optoelectronics elements of the detection and registration of the illumination on the base of the new scientific-technical decision and the elaboration of the new type of the injection photodiodes. The analytical expression for account of the characteristics of the injection photodiodes on the base of the non-homogeneous-doping and graded band-gap semiconductors

Thesis supervisor

Kurmashev Shamil Dgamashevich

Official opponents

Дроздов Валентин Олексійович
Корнійчук Володимир Іванович

Files

Sidorez.doc

aref.doc

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