Maslyanchuk O. Transport properties and detection of X- and g-ray in CdTe-based single crystals and diodes

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U004651

Thesis Registration Form

0404U004651.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-11-2004

Specialized Academic Board

Д 76.051.01

Essay

The charge carrier transport mechanisms and detection efficiency of X- and g-ray in CdTе, Cd1-xZnxTe, Cd1-xMnxTe, Cd1-xHgxTe (x=0.04-0.1) single crystals and CdTe-based Schottky diodes have been investigated. A new technique of studying the collection efficiency of the photogenerated carriers has been developed. Peculiarities of the charge carrier transport, the electric field distribution, the role of the barrier and neutral regions of CdTe-based detector with Schottky diode in the semi-isolating material have been elucidated.

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Files

AREF.doc

Розділ 2.pdf

Розділ 3.pdf

Розділ 4 та Висновки.pdf

СПИСОК ВИКОРИСТАНИХ ДЖЕРЕЛ & Додаток 1.pdf

Список умовних позначень1.pdf

Титульний Зміст Вступ Розділ 1.pdf

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