Shport'ko K. Surface polaritons in diphoshides ZnSiP2, ZnP2, CdP2

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U004802

Thesis Registration Form

0404U004802.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

01-12-2004

Specialized Academic Board

К 32.051.01

Essay

The dissertation deals with investigation of the effect of phonon and plasmon anisotropy on the spectra of IR reflection and properties of surface polaritons in anisotropic single crystals of the diphosphides ZnSiP2, ZnP2, CdP2. Model of the dielectrical permeability of these crystals in the IR spectral range was proposed. Spectral range of existence, theoretical dispersion curves of the SP-1 and SP-2 were obtained. Experimental points of dispersion curves received by ATR method are in good agreement with theoretical data. Singular surface polaritons in ZnSiP2 were investigated.

Read more

Files

OKD.doc

aref.doc

dis1.doc

dis2.doc

dis3.doc

dis4.doc

dis5.doc

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures