Suntsov A. Defective structure, transport phenomena, luminescence and radiation properties of heterosystems ? - SiO2-x <Oi, (O2)і> і Znx Cd1-x S<Os>

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U000338

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

29-12-2004

Specialized Academic Board

К 17.051.04

Essay

Objekt of investigation: mechanism of defects formation and their properties in ,. Arm: experimental research of the mechanism of formation defects,, and their influence to performances of monocrystals. Mtthods:electrical conductivity, termo-emf and luminescence. Main results:the coexistence of vacancy and interstitial defects in (,,)and defects ,in . The gear of origin of six bands of luminescence <> and 4 bands <,,Al>

Files

Similar theses