Yurkovych N. Modeling and physical properties of modified structures at the basis of glass-like germanium chalcogenides

The dissertation is dedicated to the modeling of formation of thin-film heterogeneous structures based on germanium chalcogenide glasses with Al,Bi,Pb,Te modificators and also to the investigation og physical properties of these structures and of (GeS(Se)2)1-xTex bulk glasses. The formation of dissipative thin-film structures based on Ge2S3 glass with Al,Bi,Pb,Te modificators has been described by the system of non-linear differentiated equations. The investigation of physical properties of <Ge2S3:X>(X-Al,Bi,Pb,Te) thin-film structures has been determined by ellipsometric and spectrophotometric methods. Physical properties of modified bulk Te-containing structures have been investigated for different mechanisms of modificator introduction into GeS2, GeSe2 matrix. The increase of the Te concentration causes the shift of maxima in the spectra of photoluminescence excitation to the low energy region. The changes of physical properties of bulk and thin-film structures are being revealed inthe electron- defect subsystem due to the different mechanisms of modificator introduction into the non-crystaline matrixes, which in turn serve as the basis of the ruled change of parameters og functional elements for micro-and optoelectronics.