Zakharchuk . Influence of technological and radiation defects on the phenomena of transfer in many-valley semiconductors n-Ge and n-Si

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U001195

Thesis Registration Form

0405U001195.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

16-03-2005

Specialized Academic Board

К 32.051.01

Essay

The influencing stratified periodic heterogeneities of concentration of alloying admixture on anisotropy of electro-physical properties in monocrystals of n-Ge and n-Si at the different doses is explored gamut-irradiation and light intensities. A deformation change of power crack in n-Si between the deep radiation level and bottom of с-zone in the wide interval of mechanical tensions is calculated for [110] that [111]. Definitely temperature dependence of level to Farm in n- and р-Ge with the deep power levels.

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Files

AREF.doc

disertac.doc

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