Lashkevich I. Temperature waves in isotropic homogeneous and partially-homogeneous semiconductors and insulators at bulk absorption of harmonic modulated light

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U001425

Thesis Registration Form

0405U001425.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-03-2005

Specialized Academic Board

Д 76.051.01

Essay

Object: massive and thin homogeneous semiconductors and dielectrics, and also two-layer structures. A purpose consists in construction of nonstationary thermodiffusion theory in semiconductors with power nonequilibrium carries and dielectrics, and in partially-uniform tow-layer structures. Methods are based on the analytical solving of energy balance equations for electrons and phonons due to the bulk heat sources and mutual energy exchanging. Result: the theory of electron and phonon temperature waves doe to the bulk absorption of the harmoniously modulated light in the geometrically limited uniform semiconductors and dielectrics is built.

Read more

Files

aref.pdf

dis.doc

dis.pdf

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures