Ul'yanyts'kyj K. Influence of technology on crystalline structure perfection and physical properties of CdTe and solid solutions of CdZnTe, CdMnTe

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U001561

Thesis Registration Form

0405U001561.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-03-2005

Specialized Academic Board

Д 76.051.01

Essay

Dissertation presents technology optimization results for CdTe, CdZnTe, CdMnTe crystals. It was shown that Ge, Sn, Pb, Mn and Co impurities in crystalline lattice of CdTe have stabilization action. Compensating action is characteristic to the impurities of IV-group elements in CdTe and CdZnTe crystals, showing no dependence on background impurity concentration. We were also first reporting both unstability of electrophysical parameters in crystals CdTe:Cl, CdMnTe and giant Faraday rotation in high-quality CdMnTe monocrystals.

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дисертація_вилучена.txt

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