Sklyarchuk O. Peculiarities of charge transport, photoelectric and electroluminescent mechanisms in SiC- and CdTe-based Schottky diodes

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U002054

Thesis Registration Form

0405U002054.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

29-04-2005

Specialized Academic Board

Д 76.051.01

Essay

The charge transport and photosensivity mechanisms in CdTe- and SiC-based Schottky diodes are investigated. The mehanism of electron photostimulated tunneling (from metal into semiconductor conduction band) in Al-SiC diodes is substituted. Electroluminescent radiation from forward biased Schottky diodes observed for the first time is quantitatively described in terms of the model of intraband radiative transitions of high energy electrons injected from the semiconductor into the metal.

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Files

АВТОРЕФЕРАТ.doc

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