Zorenko A. Development of techniques for increase of efficiency and enhancement of functional capabilities of IMPATT diodes in the chort-wavelength part of millimeter range

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U003920

Thesis Registration Form

0405U003920.pdf

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

17-10-2005

Specialized Academic Board

Д 26.002.08

Publishing and Printing Institute of Igor Sikorsky Kyiv Polytechnic Institute

Essay

The thesis deals with theoretical substantiation and analysis of the results of scientific researches; the solutions aimed at extension of frequency range of solid-state sources of high-power microwave radiation to the short-wavelength part of mm range are advanced and realized on the basis of scientific-technical achievements.The investigations of doping profile and geometry of diode structures are performed, as well as search for optimal operation modes is made.The efficiency of application of 2 mm-wave IMPATT diodes as basis for frequency oscillator-converters is shown. It is demonstrated that they make it possible to form a cm-wave signal and then transform it to mm-wave one,with retention of low-frequency spectral characteristics at small energy losses of input signals.It is shown,both theoretically and experimentally, that potential capabilities of SiC IMPATT diodes ensure further advance of high-power microwave devices as to considerable improvement of their power characteristics and increase ofoperating frequency. For the first time 4H-SiC IMPATT diodes were fabricated and studied in the pulsed mode.

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Files

DISSER-DISSER (1-14).doc

DISSER-p 1.1-1.4 (15-34).doc

DISSER-p 1вывод (35-36).doc

DISSER-p 2.1 (37-41).doc

DISSER-p 2.2 (42-47).doc

DISSER-p 2.3 (48-51).doc

DISSER-p 2.4.1.1 (52-69).doc

DISSER-p 2.4.1.2 (70-72).doc

DISSER-p 2.4.2 (73-85).doc

DISSER-p 2вывод (86-87).doc

DISSER-p 3.1 (88-90).doc

DISSER-p 3.2.1 (91-103).doc

DISSER-p 3.2.2 (104-110).doc

DISSER-p 3.3.1 (111-114).doc

DISSER-p 3.3.2 (115-120).doc

DISSER-p 3.3.3 (121-124).doc

DISSER-p 3.3.4 (125-132).doc

DISSER-p 3вывод (133-134).doc

DISSER-p 4.1-4.2 (135-142).doc

DISSER-p 4.3 (143-147).doc

DISSER-p 4.4 (148-159).doc

DISSER-p 4.5.1 (160-165).doc

DISSER-p 4.5.2 (166-173).doc

DISSER-p 4.5.3 (174-178).doc

DISSER-p 4вывод (179-180).doc

DISSER-ЗАКЛЮЧЕНИЕ (181-186).doc

DISSER-Прил А (201-209).doc

DISSER-Прил Б (210-218).doc

DISSER-Прил В (220-224).doc

DISSER-Список источников (187-200).doc

АВТОРЕФЕРАТ.doc

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