Tkachenko M. Improvement in polishing technology of silicon structures with dielectric isolation

Object - mechanic processing technological processes for Si structures with dielectric isolation (SSDI); aim - SSDI lapping process technological parameter optimization by virtue of developed lapping mathematic model; mastering of SSDI lapping automatic control system on the САШ-420М machine-tool which provides low-leveling of SSDI surface damaging, and prevents cracking during further processing; methods - fundamentals of expancibility theory and semiconductor physics; physic and chemical fundamentals of microelectronic technology and experimental results on lapping equipment; results - limitations implied on lapping technological parameters, optimal dimensions of lappers as well as mastered procedure of lapping quantity determination led to synthesis and industrial implementation of automation control system for diamond lapping machine-tool САШ-420М providing SSDI mechanic lapping which is characterized by high degree of geometric perfectness and damaged layer removing from the surface; innovation -it was defined for the first time the lapping process dimensions optimal parameters which do not lead to SSDI surface damage; mathematic model SSDI lapping process is developed; optimal lapper dimensions determinating provides minimal depth of damaged layer; it was defined optimal figures for vacuum table and lapper speed correspondences as well as SSDI lapping depth for a turn; with consideration of structure thickness measurement necessary lapping depth with each lapping turn and put on summarized lapping depth limitation, it was defined the method of lapping turns quantity; it was determined the parameters ,measurement procedure of SSDI positioning of the vacuum table as well as their dimensions defining stipulating optimal lapping conditions; field of implementation - the technology is implemented at the stock company "Pure Metals Plant" daughter "Pure Metals Plant", Svetlovodsk; sphere of implementation - electronic industry enterprises and branch research institutions dealing with Si ingots growth.