Timokhov D. Structural and luminescent properties of porous silicon obtained by method of the anodic electrochemical etching.

The effect of influence of bulk silicon crystallografic orientation on photoluminescence quantum output of porous silicon (PS) in the anodization process has been discovered. The semi-qualitative theoretical model of PS-(c-Si) heterojunction photo-sensitivity on the basis of lowsized PS has been developed. An opportunity of definition of average diameter of quantum wires in the vicinity of heterojunction is shown. Diffusion length of minority charge carriers in PS has been determined by the method of photocurrent. The current transport mechanism change from tunnel current into thermalactivation is possible. Inversion of photo-EMF sign can be explained by the porous silicon - graded-band gap semiconductor and presence of PS-(c-Si) heterojunction. The phenomenon of avalanche multipli-cation of charge carriers in PS has been investigated. The diffu-sion mechanism and parameters of shock ionization have been determined. The electroluminescence mechanism in PS-?-(c-Si) sandwich-structures has been found. The electrolumines-cence characteristics have been investigated.