Dmytriv A. The Point defects and physical-chemical properties CdTe, HgTe and solid solutions on their basis

The objects are defect formation processes and mechanisms of formation of solid solutions on the base of binary-semiconductor.The purpose of dissertation are to specify existing and develop new crystal-chemical models of dominant point defects in the crystals of binary compounds CdTe, HgTe and set the mechanisms of formation of solid solutions on their basis CdTe-HgTe, CdTe-ZnTe(MnTe), that the forecast physical and chemical properties of material, necessary for creation of effective devices of semiconductor technique, are determined on the basis of conducting of complex theoretical and experimental researches. The methods of research: methods of Bridgmen, two-temperature annealing, X-ray diffractometry, compensative method of Holl, photoluminescence, electronic-paramagnetic resonance, quasi-chemical and that crystal-quasi-chemical reactions, statistical. The results of dissertation are explored the mechanisms of formation of solid solutions CdTe-HgTe, CdTe-ZnTe(MnTe), that provide growing of materialwith beforehand set by concentration of transmitters of current and type of conductivity in dependence on composition.