Ivanyshyn I. Crystallochemistry of point defects and properties of nonostoichiometric SnTe and solid solutions based on it.

On the basis of an experimental researches of physics-chemical properties of nonstoichiometric undoped Tin Telluride the presence of two electrovalent states Sn2+ and Sn4+ is confirmed and new model of point defects in Sn0,984Te consisting of bivalent and tetravalent cationic vacancies is elaborated. The crystalloquasichemical equations for different mechanisms of defect formation in both doped by Ga, In, Sb, Bi p-SnTe and Sn0,984Te-Ga (In, Tl, Sb, Bi)-Te solid solutions, including charge states of own point defects and dopants, their localization in NaCl structure and chemical interaction are offered for the first time. The concentration borders of their realization are determined. It is shown, that solid solutions formation is connected with the processes of disproportionation of charge states both cationic vacancies and dopants, with redistribution between them in cationic sublattice, and with separation of sphalerite phases.