Vasheruk O. The analyses of the thermal conditions influence on Si monocrystals structural perfectness and the thermal unit development for defect - free ingots growing in industrial conditions.

The author analyzed the thermal conditions formation mechanism in Sz Si monocrystals growth сhamber. It is determined the thermal conditions influence on microdefects density and oxygen irregular distribution in Si monocrystals. The work presents the model binding thermal conditions, microdefects and oxygen in Si crystals. On the basis of the model author carried out parameter research and received new results that defin regularity of thermal screens and construction materials peculiarities influence on the oxygen distribution and microdefects density in Si monocrystals. It is stated the thermal screens system and angle coefficients that determine the definition of effective radiation from the surface in the thermal unit zone. It is developed the thermal unit construction providing thermal conditions formation for 200 mm Si monocrystal ingots with microdefects density, ingot length not exceeding 5 def.sm-2 and oxygen distribution irregularity being no more than . It is developed and applied the unit for microdefects density measurement on the monocrystal wafer surface.