Sus' B. Energy band transformation and behaviour of tenso-effects in highly strained Ge and Si crystals.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U002321

Thesis Registration Form

0406U002321.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

29-05-2006

Specialized Academic Board

Д26.001.31

Essay

The dissertation presents the study of tensoeffects in Si and Ge crystals under high uniaxial pressure and its influnece to the energy structure of crystals. Data of analysis of tensoresistivity effects approve that the decrease of resistivity with pressure in neutron doped gamma irradiated silicon is connected with strain-induced ionisation of termodonors that appears after annealing.The activation energies of thermodonors were determined for high resistance silicon. Appearance of strain-induced metal insulator transition indicates that the localization of electron on impurity center takes place as a consequence of an appropriate transformation of the energy spectrum of the conduction band of Ge which is characterized by the increase of the effective mass of electron under high uniaxial pressure. The results of tensoeffects analysis in uniaxially strained p-Si show that tensoresistivity is defined by hole redistribution between light hole and heavy hole subbands and transformation of hole subbands.

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11_dodatky_AB.doc

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