Luchechko A. The mechanisms of recombination emission in complex oxides with impurities of transition metals ions

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U003836

Thesis Registration Form

0406U003836.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

20-09-2006

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

The relationship between trap centers of charge carriers and luminescence decay kinetics in beta-Ga2O3-In2O3-SnO2 compounds activated by chromium ions has been established. The possibility of using these compounds in UV-radiation monitoring applications has been shown. The effect of doping with magnesium impurity and the annealing in reducing environment on luminescent properties and trapping processes of charge carriers in garnets single crystals and single crystalline films (SCF) have been investigated. Valence ytterbium ions states evolution regularities have been examined depending upon garnets SCF growth conditions. The model of centers, responsible for local compensation of the surplus charge created by Fe3+ ions, and the mechanisms of "red" luminescence recombination excitation in ZnWO4 and CdWO4 crystals have been suggested.

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Files

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Dysertatsija.doc

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