Сhernyuk O. "Interaction of GaSb and GaAs with HNO3-HHal-organic acid water solutions"

Thesis is devoted to the experimental investigations of the GaAs and GaSb chemical dissolution in the HNO3-HHal-organic acid water halogen emerging solutions and to development etching compositions and technological procedures of gallium arsenide and gallium antimonide surfaces treatment using the obtained results. Using mathematical planning of experiment there were constructed 21 projections of equal etching rate surfaces for the GaAs and GaSb dissolution in the water solutions of twelve systems HNO3-HHal-organic acid. The influence of organic solvents (acetic, lactic, citric, oxalic and tartaric acids) on the chemical dissolution and polishing properties of the solutions were established. It was determined that the best polished surfaces for GaSb could be obtained at the using of the HNO3-HCl-lactic acid etchant compositions. In the case of GaAs the best results were obtained at its treatment in the-HNO3-HBr-citric acid water solutions. For the fist time the bromine emerging etching compositions based on the HNO3-HBr water solutions were proposed for the GaAs chemical treatments. The bromine emerges in such compositions as the result of initial components interaction and its contents could be regulated to a certain extent by the adding of different organic solvents. The series of chlorine and bromine emerging etchant compositions was developed for the different technologic treatments of GaSb and GaAs and the etchant compositions and the technologic procedure of chemical modifications of mentioned above semiconductor compounds were optimized.