Dan'kiv O. The influence of deformation on electron and hole states in InAs/GaAs strained quantum dots

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U002247

Thesis Registration Form

0407U002247.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

27-04-2007

Specialized Academic Board

Д 76.051.01

Essay

The dissertation is a theoretical study of modification of the localized electron and hole levels in the strained spherical and cylindrical InAs/GaAs quantum dots of different sizes under the influence of self-consistent deformation of the material of a quantum dot and the surrounding medium, and of external pressure. In the work the computational methods of the baric coefficient in quantum zero-dimensional semiconductor structures is developed.

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Files

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