GLUKhOV K. Electronic states of superlattices and influence on them of the grow defects and external factors

The thesis deals with the investigation of energy states of the electron subsystem in semiconducting superlattices. The symmetry-topological peculiarities of the valence band of АIV and AIIIBV-type cubic semiconductors and superlattices built upon them have been investigated. The boundary conditions imposed on the envelope functions and their derivatives on heterojunctions with piecewise-smooth potential have been obtained.. General form of the transfer matrix for a superlattice with an arbitrary potential profile has been obtained and the calculations of the energy states within the corresponding model have been carried out. First-principles studies of the structural relaxation in a number of symmetrical (GaAs)N/(AlAs)N superlattices allowed to obtain the parameters of inhomogeneous displacement field in the heterojunction vicinity. The form of additional terms of the effective Hamiltonian, arising due to taking into account pressure induced deformation field, as well as the corresponding boundary conditions has been established.