Zolkina L. Influence of ultrasound on the growth process of Ga0.03In0.97Sb single crystals from melt and GaAs layers by the liquid-phase epitaxy

The study object - the technological growth processes of Ga0.03In0.97Sb single crystals and epilayers GaAs high quality in ultrasound field. The study purpose study - define the growth condition of Ga0.03In0.97Sb single crystals and epilayers GaAs high quality in ultrasound field. The study methods - electron probe microanalysis, method of the chemical etching, optical microscopy and X-raying. Theoretical and practical results, novelty - the influence of the ultrasound at frequencies from 0,69 to 1,44 MHz on the Ga0.03In0.97Sb single crystals growth, as a result which the growth striations with a period more than 14 µm eliminate, was noted; the change dependence of the electrophysical properties in Ga0.03In0.97Sb single crystals grown in ultrasound field and crystals pulled without ultrasound was found; optimum annealing condition of Ga0.03In0.97Sb single crystals, which allows to prevent formation the cracks with length more than 0,1 mm, was determined; the physical model of the effect ultrasound mechanism on the growth process of Ga0.03In0.97Sb single crystals was proposed; it was shown that effect of ultrasound on the growth process of Ga0.03In0.97Sb single crystals decreased as the vertical temperature gradient and the copper rod rotation rate were increased and did not depend when the fluid depth was changed; the effect of the ultrasonic field at a frequency of 3 MHz on the morphology of GaAs epilayers, which is consisted in removing macrosteps on the layers surfaces, was observed. The Degree of inculcation - Ga0.03In0.97Sb single crystals grown by Czochralski method in ultrasound field were used as material for production of Hall sensors in laboratory of the Institute solid-state physics, material sciences and technology SNC KPTI NAS of Ukraine, Kharkiv, the results of thesis were also applied in educational process at the study courses "Physical properties and study methods of materials" and "New materials" in the V. Dal ENU, Lugansk. Field of application - technologies of the materials obtain of electronic technique.