Kulchynsky V. Electrical and photoelectric processes in CdxHg1-xTe (x > 0.6) solar cells, optical and gamma-ray detectors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U002781

Thesis Registration Form

0407U002781.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-05-2007

Specialized Academic Board

Д 76.051.01

Essay

The electrical and photoelectric processes in the solar cell, optical and gamma-ray detectors based on CdxHg1-xTe (x>0.6) are studied. Possibility of practical use of CdxHg1-xTe (x=0.64, 0.71) for optical detector fabrication for the wavelengths 1.3 and 1.55 mkm have been established. Requirements to the CdxHg1-xTe (x=0.8) for its efficient application in solar cells have been determined. Advantages of CdxHg1-xTe (x>0.6) application in gamma-ray detectors in comparison with the detectors based on CdTe are shown.

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Files

Diser--Рoзділ 1.doc

Diser--РОЗДiЛ 4 + Список літератури + Додаток.doc

Diser--Роздiл 2.doc

Diser--Роздiл 3.doc

aref.doc

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