Pashkov A. Semiconducting lasers with electronic pumpage on the basis of А2В6 and А3В5 compound groups with improved exploitation characteristics

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U004056

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

17-10-2007

Specialized Academic Board

К 41.052.03

Essay

Dissertation is dedicated to the creation and developing methods of improving exploitation characteristics of semiconducting lasers with electronic pumpage. The use of binary, tri- and four componential concrete solutions of А2В6 and А3В5 compound groups for the creation of lasers of this type for the 0,3-10,6 mcm emission waves. Dependencies of spectral, threshold and energy characteristics of semiconducting lasers from physical and chemical states of semiconductors, types of admixtures, level of alloying, work temperature and level of active environment field are defined. Research of degradation processes of this type of lasers are conducted. The choice and demands for semiconducting materials are formulated as well as conditions for their work for creating effective and stable lasers with preset wave length in 0,5-4,0 mcm interval. Experimantal lasers with electronic pumpage are developed and created, technologies for creation of multielement targets are improved.

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