Lyubchenko S. Transport phenomena and quantum size effects in thin films of bismuth and lead telluride and structures on their basis.

The object of the research- quantum size effects in the transport phenomena of thin films and thin films structures. The aim of the research: to study the influence of the quantum size effects on the kinetic properties of PbTe and Bi thin films and PbTe/Bi heterostructures with the help of the research of the transport phenomena depending on the thickness of the thin layers, temperature and charge carriers. The results of the research, the novelty: The oscillatory character of the kinetic properties dependences on the thin PbTe, Bi films thickness and on the Bi layer thickness in mica/PbTe/Bi/Al2O3 heterostructures, which was connected with the quantization of charge carriers energy spectrum was established. It was established that the semimetal-semiconductor transition take place and that in the semiconductor region the width of the energy gap increased with the thickness Bi films decreasing up to d=25 nm. It was shown that the oxidation processes essentially changed the character of the thicknessdependences of thin PbTe films without sheeting even at a room temperature.