Semenov A. Oscillators on negative-resistance transistor structure

The object of research is a process of conversion of a direct sources' energy into an electrical oscillations' energy in the oscillators on negative-resistance transistor structures with electrical and optical frequency tuning. The subject of research is static and dynamic characteristics of active elements of the oscillators on negative-resistance transistor structures with electrical and optical frequency tuning. The aim of research is increasing of efficiency and expanding of frequency tuning range for oscillations of the oscillators on negative-resistance transistor structures. The theoretical and practical results of research are: mathematical linear and nonlinear models of the oscillators on negative-resistance transistor structures have been improved; new schematic decisions for the oscillators on bipolar transistor, MOS transistor, SIT and HEMT structures with increased efficiency and stability, with electrical and optical frequency tuning have been developed, for them analytical equations forengineering calculation of volt-ampere characteristics of the oscillators' active elements, oscillator excitation conditions, and fixed oscillations' amplitude and phase have been obtained. Degree of introduction - within the field. Area (field) of utilization is electronic and radio engineering.