Lukiyanchuk E. Interaction of CdTe, CdxHg1-xTe, GaAs and InAs with H2O2-mineral acid-solvent water solutions.

In this work the investigation of dissolution of CdTe, Сd0,22Hg0,78Te, GaAs and InAs with H2O2-HNO3, H2O2-H3PO4, H2O2-H2SO4, H2O2-HCl and H2O2-HNO3(HCl)-organic solvent in water solutions (ethylene glycol, lactic, tartaric and citric acids were used as the organic solvents) has been researched. The kinetics and the mechanism of the chemical dissolution processes were investigated using the reproducible hydrodynamic conditions.The surfaces of equal dissolution etching rate for all systems (28 Gibbs diagrams) were constructed and the limits of polishing, unpolishing and selective solutions were determined.The influence of the mineral acid and the solvent nature (the existence of the certain number of carboxyl groups in the organic acid) on the dissolution rate of the CdTe, Сd0,22Hg0,78Te, GaAs and InAs single crystals, the polishing properties of the solutions and the quality of the treated surface were recognized. The surface condition after chemical etching (the microstructure and roughness) was investigated. There were optimized the polishing compositions in the investigated systems and developed the methods and technological procedures of the modification and preparation of the polished surfaces of the single crystals using the chemical dynamic polishing method. The procedure of the simultaneous etching of the CdTe and Сd0,22Hg0,78Te films was developed also.