Hnativ I. Interaction of the single crystals of the ZnxCd1-xTe and CdxHg1-xTe solid solutions with H2O2-HBr-solvent etching compositions.

Thesis is devoted to the investigation of physico-chemical interaction of the CdTe and Zn0,04Cd0,96Te, Zn0,2Cd0,8Te, Cd0,21Hg0,79Te solid solutions single crystals with the H2O2-HBr-solvent (water, glycol, tartric, citric, lactic acids) bromine-emerging mixtures and to the development of etchant and the schedule of the surface treatment of the mentioned above semiconductor materials using the obtained experimental data. The influence of oxidant and solvent nature on the dissolution rate, polishing characteristics of etchants and quality of obtained surfaces has been established of the CdTe and Zn0,04Cd0,96Te, Zn0,2Cd0,8Te, Cd0,21Hg0,79Te solid solutions single crystals. It was shown that the chemical etching rates of ZnхCd1-хTe and CdхHg1-хTe solid solutions are rather more than that of undoped CdTe (110). The polishing etchant compositions were optimized and the technology procedures of chemical-mechanical and chemical-dynamic polishing and the methods of polishing surfaces preparation of the CdTe and Zn0,04Cd0,96Te, Zn0,2Cd0,8Te and Cd0,21Hg0,79Te solid solutions single crystals were developed. It was shown that the using of the optimized etchant compositions based on H2O2-HBr-glycol for the Au-p-CdTe diode manufacturing leads to the formation of ohmic contacts.