German I. Transport properties and photoelectric processes in Hg3In2Te6-based diode structures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U004553

Thesis Registration Form

0407U004553.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-10-2007

Specialized Academic Board

Д 76.051.01

Essay

The physical processes determining electrical, optical and photoelectric characteristics of the diode structures based on Hg3In2Te6 are studied.The current-voltage characteristics of the Au-Hg3In2Te6 and Ni-Hg3In2Te6 diodes are in agreement with the Sah-Noyce-Shockley theory with account made for the processes in a Schottky diode. The main transport mechanism in ITO/Hg3In2Te6 is an over-barrier electron flow. The experimental photoresponse spectra of diodes has been explained.

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