Vorobets O. Modification of the properties of the metal - halcogenide semiconductor barrier structures by pulse laser irradiation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0408U000308

Thesis Registration Form

0408U000308.pdf

Applicant for

Vorobets Olexander Ivanovich

Specialization

01.04.10 - Фізика напівпровідників і діелектриків

Date of defense

28-12-2007

Specialized Academic Board

Д 76.051.01

Essay

The thesis presents the results of investigation of the effect of low-power pulse laser irradiation on physical and chemical processes kinetics in solid phase, as well as on electrical and physical properties of surface barrier structures of the Ме- А2В6, А3В6, А4В6. It is shown, that stabilization of characteristics of the Me-CdTe structures is caused by modifications in impurity-defect system in space charge region. The Me-In4Se3, Me-PbSnTe structures exhibit modification of the characteristics, caused by phase composition changes of the contact layer.

Thesis supervisor

Gorley Peter Nicholayevich

Official opponents

Лашкарьов Георгій Вадимович
Маслюк Володимир Трохимович

Files

aref.doc

Зміст,Вступ,Титульна,Розділ 1.doc

Розділ 2.doc

Розділ 3.doc

Розділ 4, Література.doc

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