Roshchina N. The development of a physico-chemical method of growth and research of characteristics of light-emitting structures on basis wide gap А2В6

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0408U001246

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

21-03-2008

Specialized Academic Board

Д26.199.01

Essay

The dissertation is devoted to development and complex research of characteristics of thin films obtained on the basis wide gap А2В6 with the purpose of their use as light-emitting structures. The new thin films of ZnS:Cu and composite films containing the ZnS-, CdS- nanoparticles were prepared with different colours of a luminescence. The surface morphology and structure of the polycrystalline films on the base ZnS:Cu and composite films on the base ZnS and CdS are investigated. It is established, that the polycrystalline films on the base ZnS:Cu have more ordered structure and less relief surface, than a films, obtained by a method of electron beam evaporation in vacuum. The photo- and electroluminescence spectra, luminance-voltage characteristics, charge-voltage characteristics and degradation characteristics of phosphors are investigated. It was shown that the concentration of materials in the initial solution and the substrate temperature are the most important parameters for the spectral structure of the light emission. It was observed, that the change of a luminescence colour from yellow up to dark blue is achieved by change of a substrate temperature from 260 to 300 °С (thin films of ZnS:Cu) and from 120 to 40 °С (composite films). The TFEL devices with ZnS:Cu films was fabricated. Blue colour emission was obtained. The degradation behavior of TFEL devices is the same as that of commercial thin film phosphor.

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