Markevych S. Amprovemenent technologies on GaAs single crystals' growing for X-and y-rays detectors

The study object - the improvement of GaAs single crystals, growing suitable for making X-and Y-rays detectors which have improved µt parameter. The researches methods - fundamental positions theory of growth the semiconductors crystals from melt, theory of cooperation of solid with x- and y-rays. Researches were conducted with modern photometrical and computers technique. Theoretical and practical results, novelty - analytical dependence of µt parameter on Uсм displacement is got; a mathematical ground of express-method measuring µt parameter; on the basis of conducted theoretical and experimental research the influence of temperature fluctuations and convected processes in growing chamber; conditions of GaAs polycrystal synthesis; vacuum-thermal treatment conditions of graphing on the electrophysical parameters of GaAs single crystals were defined. The device of the automated measuring in µt parameter value, allowing to determine µt parameter value was developed and inculcated. A technological route chart in the improved growing technology of GaAs single crystals, suitable for making X-and Y-rays' detectors which have the improved value of µt parameter. The research results are inculcated into the industrial exploitation on "Arsenid - 1" in 'Pure Metals' JSC Svetlovodsk.