Ivanits'ka V. Interaction of the different orientated CdTe single crystal surfaces with the solutions based on I2 and H2O2-HI

The etching compositions based on iodine containing and iodine emerging solutions and modes of polishing of CdTe (111)A, CdTe (111)B, СdTe (110) and CdTe (100) surfaces were developed by experimental investigations of interaction of the mentioned above surfaces with the I2-CH3OH, I2-DMFA and H2O2-HI-organic solvent solutions. The surfaces of equal etching rates of these semiconductor samples in all investigated etching compositions were obtained using the mathematical planning of experiment, when methanol, ethylene glycol, citric, lactic and tartaric acids were used as organic solvent. The influence of organic acid on the etching rate and the dissolution mechanism was established. The kinetic regularities of dissolution process were investigated and the regions of polishing, unpolishing and selective solutions in each studied system were determined. The influence of the surface crystallographic orientation on the rate and mechanism of interaction processes was specified.