Amini M. Simulation of monolithic integral microcircuits components of microwave combined A3 B5

The thesis research physical processes in components of monolithic IC and simulation of characteristics of microwave components in submicron integral structures based on the junction AIIIBV , on this regard, passing from fabrication of the integrated circuits to the submicron active areas sizes of components (to 0,1 micron), it is necessary that the submicron effects in the mathematical models of microwave, analysis and optimization of parameters and characteristics of submicron semiconductor structures to be calculate adequately, and also the developed models for using in microwave design automation system of devices to be adopted. Mathematical models and algorithms are created to describe the distribution of the electric field in three-dimensional transition line with complex topology for the microwave monolithic integrated circuits. Developed method of two- dimensional simulation of the embedded monolithic integrated circuits components and calculation procedure of transition line circuit-engineering parameters are suitable for designing of circuit-engineering.