Gryvul V. Influence of Sn dopand on physical properties of wide bandgap II-VI composites

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0408U005435

Thesis Registration Form

0408U005435.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

28-11-2008

Specialized Academic Board

Д 76.051.01

Essay

It is set that Sn doping of ZnSe is cause of increase of electron conductivity and blue band luminescence efficiency. This band is a superposition of three channels of recombination: annihilation of free exitons, interband recombination and transition on acceptor centers are shown. Diffusion of Sn at certain condition causes to independ of substrate conductivity type and magnitude transition of CdTe to semiinsulate state. Diffuse layers ZnTe:Sn with high electron conductivity are obtained.

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Files

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