Myronchuk G. Defects formation in CdS and CdS:Cu on irradiation by energetic particles of subthreshold energy

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U000306

Thesis Registration Form

0409U000306.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

16-01-2009

Specialized Academic Board

К 32.051.01

Essay

Mechanisms of subthreshold defects formation in cadmium sulfide single crystals, including crystals originally doped with Сu atoms, as well as crystals electric, photo-electric, and optical properties are investigated. It is demonstrated that X-ray or ionizing radiation creates vacancies in the Cd sublattice of the crystals in the in local areas which are characterized by deformed and weakened interatomic bonds. Investigations of excitation transfer to the inner atomic shells allow to consider a doped-ionizing mechanism with multiple ionization of Cd atoms as the mostly efficient one of subthreshold defects formation. Aforementioned mechanism become the most pronounced in the doped with Cu atoms crystals. It is shown a role of thermal effects during laser annealing in transformation of defects in undoped and doped with Cu atoms crystals.

Read more

Files

aref.doc

dis.doc

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures