Mysliuk O. Optical spin polarization of electrons in diluted magnetic semiconductor under impurity absorption

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U000372

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-12-2008

Specialized Academic Board

Д 76.051.01

Essay

We determined the combined influence regularities of type and parameters of the polarized light wave corresponding to the impurity absorption, the magnitude of electric field and processes of long-term spin relaxation on electron spin polarization degree in the diluted magnetic semiconductors with deep impurity level. It was shown that in the stationary space-inhomogeneous state under week electric fields the maximum spin polarization degree for the band electrons can be achieved for device thickness comparable to the diffusion length of the minority carriers. It was found that the application of carrier warming electric field in addition to left-hand polarized light can significantly increase spin polarization degree for the band electrons.

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