Optasyuk S. The influence of microstructure changes on the luminescence of low dimensional ZnS, CdSe

The thesis is devoted to the study of influence of microstructure changes caused by diffusion processes of impurities on the luminescent characteristics, as well as the processes that affect the formation of radiating centers and their environment due to thermal annealing and external influences in low dimensional ZnS, CdSe. Based on the analysis of luminescent characteristics the processes of Ga diffusion in the ZnS powder at the low-temperature doping were investigated, taking into account the influence of external factors. A working models of Ga diffusion processes in ZnS have been proposed at low-temperature doping of ZnS by metallic gallium under the influence of external factors. The relationship between changes of luminescent characteristics and processes of Mn diffusion in ZnS occurring in the material on post-technological stage have been shown. It was found that the diffusion of Mn in ZnS carried out in several ways - fast and slow diffusion flow. It was established that the treatment of luminophores based on ZnS:Mn by weak magnetic field leads to a redistribution of effectiveness between excitation channels of Mn2+ in powder ZnS:Mn luminophores. Redistribution of intensity of the luminescence bands under the influence of an electric field due to transfer of photoexcited charge carriers from the quantum well onto the surface defects in the CdSe nanoparticles was found.