Martynyuk N. Regularities of luminescence quenching and changing of the charge state of Yb3+ in highly doped Yb:Y3Al5O12 single crystals and epitaxial films.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U001400

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

06-03-2009

Specialized Academic Board

K32.051.01

Essay

The dissertation is devoted to the problem of influence of point defects on the properties of highly doped Yb:YAG single crystals and films that are promising materials for thin disk laser active medium. In particular, regularities of impurity influence on luminescence properties of materials and on the course of recharge processes Yb3+ - Yb2+ under high temperature reduction and oxidation treatments are investigated. Dependences of the crystal structure parameters of Yb:YAG on ytterbium concentration were obtained.

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