Yatsunskiy I. Oxidization process influence on defect formation in the doped silicon

The near-surface silicon layers in silicon - dioxide silicon systems with used modern method of research are investigated. It is shown that these layers have compound structure and include disordered silicon and dislocation networks. On area border disordered silicon and dislocation nets area the jump of mechanical pressure which arises owing to the accelerated diffusion of oxygen along structural defects is observed, that cause the of the electron traps jump. The near - surface layers of silicon width which contains disordered silicon and dislocation nets depend on level of the localized mechanical pressure. The process current flow in MOS - structure inversion channel was modeled in basis of real structure of near - surface layers in Si-SiO2. This model takes into consideration the electron scattering on dislocation barriers. Also, the major density of energetic deep states in near-surface layers of silicon comparable to density of the defect state in silicon dioxide and on an interface silicon dioxide - silicon, energy states in near-surface layers of silicon will influence on balance between radiation susceptibility and thermofield stability. In the course of thermal silicon oxidation and by chemical processing of a surface, it is received chemically - nanostructured silicon radiating in visible area of a spectrum.