Banzak O. Methods and means of radiating updating properties of semiconductor materials and devices

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U003228

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

17-06-2009

Specialized Academic Board

К41.052.03

Essay

The dissertation is devoted to creation and improvement of methods, techniques and technologies of management by properties of semi-conductor materials and devices of solid-state electronics by means of ionizing radiation (ІR). On the basis of the theory of interaction ІR with a firm body elites as a control facility (updatings) fast electrons and neutrons, the scale-quantums, the certain effective sources of their generation, the developed technologies of an irradiation of concrete objects.In work the used such materials, as volumetric monocrystals and epitacsilation layers of silicon, binary connections А2В6, А3В5 and their firm solutions. Among devices the selected discrete transistors, semiconductors and hybrid integrated schemes, light diodes, lasers injection and with electronic накачкой energy and so further.It is developed and advanced models of physical processes which occur in a firm body at action ІR, depending on type and initial properties of materials and devices. On the basis of these models the developed methods and techniques of updating of devices of solid-state electronics. The developed recommendations concerning increase of stability of their parameters at operation in conditions of action ІR.

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