Kovtunenko V. Structure of amorphous films semiconductors of Ge-Sb-Se system

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U003708

Thesis Registration Form

0409U003708.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

09-10-2009

Specialized Academic Board

К 61.051.01.

Essay

Complex experimental researches regularities formation structure of thin amorphous films semiconductors on the whole triple system on three levels (shot-range level, intermediate level and nanostructure) were conducted. In Gibbs triangle of Ge-Sb-Se system for the first time the main concentration areas were discovered, in every of which condensation with substantially different structure types of atomic network and amorphous matrix is realized. Suggested model, according to which substantially differences in amorphous films structures of different groups are caused by different mass spectrometric steam phase composition.

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