Voronkin Y. Optimization of receipt conditions of semiconductor crystals CdTe, Cd(Zn)Te, ZnSe(Te) and detectors on their base

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U005727

Applicant for

Specialization

  • 05.02.01 - Матеріалознавство

25-11-2009

Specialized Academic Board

Д 64.169.01

Institute for single crystals NASU

Essay

The dissertation is devoted to optimization of engineering process of production of solid-state detector on the basis of CdTe, Cd(Zn)Te, ZnSe crystals. The procedure and the equipment which allow to produce the particularly pure zinc, cadmium and tellurium of 6N purity level in the rotating container were devised. Conditions of production of CdTe, Cd(Zn)Te semiconductors and detectors on their basis were optimized. It has allowed to obtain a result - energy resolution 4,5 % at the registration of gamma-quantums with energy 59,54 кеV (241Am). The original construction and procedure of production of UV-radiation detectors on ZnSe basis with the improved photosensitivity in 2 times relative to known analogs were devised. The engineering process of production of scintillators on ZnSe basis was optimized and applied in industry of Institute for scintillation materials; it was certificated according to ISO 9001. The engineering process of production of 1D-and 2D- scintillation matrices on ZnSe basis by the group cutting method for positional-sensitive detectors was devised.

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