Zhavzharov I. Modification of structure and electro-physical parameters of metallic thin-films and heterostructure on their basis under the influence of atomic hydrogen

This dissertation references complex experimental research work of electro-physical qualities of thin metal films Ni, Cu, Ag (10-200 nm) and film-based structures that allowed to determine and add to the general laws of atomic hydrogen effect on the structure and conductivity of thin metal films. All processes occurring in thin metal films when atomic hydrogen is applied are divided into mechanisms which dominate the conductivity of the thin film surface during one of the three treatment phases. The non-linear dependency of the thin film resistance was discovered and explained through the concurrent processes. It was established the dependence of the processes treated by atomic hydrogen on interaction conditions: qualities of initial material, film, atomic hydrogen concentration, time of treatment and chamber pressure. It is shown the possibility to guided modification of the conductivity, tensiometric film coefficient and the film adhesion. It was determined the influence of atomic hydrogen on silicon plates changes the surface potential and depends on the Si surface condition: thickness of the oxide and crystallographic orientation.