Frolov A. Prognostication, diagnostics, identification and reliability of monocrystalline silicon photocells with n+-p-p+ structure

Object - technological routes and operations of producing monocrystalline silicon photoelectric converters (PEC) and their basic, output photoelectrical and technological parameters. Purpose - development of forecasting, diagnostics, identification and reliability methods of monocrystalline silicon PEC with n+-p-p+ structure, technological investigations on the basis of adequate statistical models. Methods - methods of multiparameter functions extrema finding, methods of regression analysis, methods of regression equations adequacy assessing by Student's and Fisher' s criterion. Equipment - personal computer, PEC, automated meter of light and dark volt-ampere PEC characteristics. Theoretical and practical results - scientific grounds of fabrication method for silicon monocrystalline photoelectric converters with n+-p-p+ structure for domestic solar power engineering were developed, the automated method of measuring basic and output PEC parameters in quasi-real time was improved. Scientific novelty - for the first time statistical models of photoelectric converter parameters distribution have been developed, that enables you to create the procedure of automated sorting of PEC samples under fixed deviation of photoelectrical parameters as well as the procedure of failure diagnostics when increasing the deviation interval. It also makes possible to realize technological identification of PEC according to the mode of diffusion doping operation (diffusion time, thickness of ЖРК alloying layer); statistical regression models of the 1st, the 2nd and the 3rd order were developed which provide the search of optimal values of PEC parameters such as Uxx, Ikz, Rn on the basis of gradient-descent method and evaluation of reliability for photoelectric devices operation; taking into account the results of comparative analysis of modern PEC models and a new generalized physical model we developed the automated method of silicon monocrystalline PEC parameters control which differs from the present ones by simultaneous use of dark and light volt-ampere characteristics and finding these parameters in quasi-real time during one light impulse. Introduction - at the state-run enterprise "Scientific-research Technological Institute of Instrument Making" (Kharkiv) and in the teaching process of Kharkiv National University of Radioelectronics. Field of Application - electronic engineering enterprises producing solar batteries and producers of photodiode instruments.