Ryabets O. Lange silicon ingot technology for optoelectronic systems

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U000562

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

26-02-2010

Specialized Academic Board

К45.124.01

Essay

Object - process of silicon blanks reception of the set geometrical form and the sizes for optoelectronic reflective systems; the purpose - working out of industrial technology and the equipment for reception by the silicon-casting method large-sized silicon blanks (diameter up to 1000 mm) for mirrors of optoelectronic systems; methods of researches are contact measurement of temperature, metallography, X-ray flaw detection , regression analysis, gas fusion analysis; results and scientific novelty: for the first time the hydrogen concentration in silicon crystals semiconductor quality, used as an initial material for casting and in cast silicon products determined, specific speed of silicon melt degassing defined, pressure value in the chamber at which evacuation of hydrogen from silicon melt begins defined; silicon casting method has received the further development which increased the diameter of the received blanks up to 1000 mm; an industrial technology for producing solid and lightweight silicon blanks with a diameter up to 1000 mm for optical systems was developed. The results of research implemented to the Public enterprise "Zaporozhye Titanium-Magnesium Combine", as well as used in the educational process in the Classical Private University (Zaporozhye). Sphere of use is production of optoelectronic systems

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