Tsymbal V. Stability of contact metallized systems with Schottky barriers

The aim - development and consistent application of research techniques for degradation processes in specific multicomponent systems - metal-semiconductor contacts. Object - phenomenon of thermal degradation of contact metallized systems (CMS), including their near-contact layers, on semiconductor crystals, in particular GaAs. Subject - physical processes of mass transfer between the CMS components, including diffuse transfer, chemical reactions and phase formation processes, as well as influence of diffusion barriers (DB) on gold penetration into the work space of barrier and ohmic contacts on GaAs. Methods - X-ray structure analysis; Rutherford reversed scattering spectroscopy, electronic microscopy. Results - a relation has been found between a high gold and substrate elements (Ga and As) permeability of CMS and polycrystal and intermetallic compounds formation; limited opportunities of active rare-earth (Yb) and high-melting (Mo) metal films application as part of CMSs in order to enhance their stability have been proved; homogeneous LaB6 layers (noncrystalline or dispersed polycrystalline) have been proved to be the most efficient stabilizing DBs comprising the studied CMSs. Implementation - creation of a stand for testing of technological modes of Schottky diodes implementation, development of a physical basis for manufacture of reliable devices on their basis. Application - manufacture of microelectronic semiconductor devices