Koval Y. Physico - active influence on the transport phenomena in single crystals of cadmium antimonid.

Dissertation deals with investigation of the influence of defects of technological and radiation origin on phenomenon of cadmium antimonid transport at various physico - active effects and at presence of inhomogeneous distribution of doping impurity in semiconductor volume. Presence of inhomogenities in impurities Te and In distribution CdSb single crystals was elicited. Influence of layered periodical inhomogenities (LPI) on the effect of change-over from high ohmic to low ohmic state in CdSb(Te) single crystals was determined. It was fixed that sharp increase of mobility and growth of average transport length of charge carriers free path takes place in CdSb(Te) samples cut along the axis of the crystal growth owing to the influence of LPI at light intensity increase. Influence of irradiation on the transport phenomenon in cadmium antimonid single crystals was investigated. Maxima at carriers mobility dependences on the irradiation doze were fixed at irradiation of CdSb(In) single crystals. A model explaining this phenomenon is offered. New methods of determination of the depth of energy levels bedding in the forbidden zone, based only on the use of piezoresistance date is offered.