Boledzyuk V. Properties of insertion compounds hydrogen, barium and iodine based on layered InSe and GaSe crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U004448

Thesis Registration Form

0410U004448.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

01-10-2010

Specialized Academic Board

Д. 76.051.01

Essay

Object of the research: intercalated layered А3В6 compounds. The purpose of the research: the determination changes of properties of InSe and GaSe singlecrystals and based on them nanocrystals at insertion of hydrogen, barium and iodine. Research techniques: X-ray, optical, impedance. Results of the researches: nanodimensional compounds of layered InSe and GaSe crystals are obtained; the evolution of the absorption bands of the layered crystals due to insertion of these impurities is established; dielectric properties of InSe and GaSe hydrogen intercalates are investigated; the reversibility (in percents) of hydrogen insertion is established. The area of application: Semiconductor materials science, hydrogen energetics

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Files

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