Vorobets M. Photoelectrical properties of heterocontacts based on the layered GaSe and InSe crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U005407

Thesis Registration Form

0410U005407.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-06-2010

Specialized Academic Board

Д 76.051.01

Essay

Present investigations оf the influence of static pressure on the electrical and photoelectrical parameters of heterojunctionsbased on the layered and crystals. The changes of the electrical and photoelectrical parameters of the InSe/GaSe heterojunction are discussed from the point of view of modification of the interface layer. It is shown that a nature substance - mumijo can be used for development and preparation of photosensitive structures. For the heterocontacts between semiconductors n-InSe and mumijo the investigations of electrical and photoelectrical properties as well as optical absorption spectra in the range 0.4-1.2 micrometers for mumijo films are presented.

Read more

Files

aref.doc

dis1.doc

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures