Koval K. Radiomeasuring Devices Based on Capacitance Effect in Transistor Structures with Negative Resistance

The aim of research is functional abilities extension of the radiomeasuring devices based on capacitance effect in transistor structures with negative resistance.The object of research is a signal transforming process in the radiomeasuring devices based on capacitance effect in transistor structures with negative resistance. The subject of research is static and dynamic characteristics of the radiomeasuring devices based on capacitance effect in transistor structures with negative resistance. The theoretical and practical results - new mathematical models of electrically-controlled capacitance equivalents on capacitance effects of bipolar, bipolar-field, and field-effect transistor structures with negative resistance have been developed; original electrically-controlled radiomeasuring devices (frequency multipliers, pulse generators, electrical filters, and phase inverters) with extended functional abilities based on capacitance effects in transistor structures with negative resistance have been proposed. Degree using - within the field. Area (field) of utilization is metrology and radiomeasuring.